| PART |
Description |
Maker |
| HYI18T1G400BF-2.5 HYI18T1G400BF-2.5F HYI18T1G800BC |
1-Gbit Double-Data-Rate-Two SDRAM 256M X 4 DDR DRAM, 0.5 ns, PBGA68
1-Gbit Double-Data-Rate-Two SDRAM 256M X 4 DDR DRAM, 0.6 ns, PBGA68
1-Gbit Double-Data-Rate-Two SDRAM 256M X 4 DDR DRAM, 0.45 ns, PBGA68
1-Gbit Double-Data-Rate-Two SDRAM 64M X 16 DDR DRAM, 0.5 ns, PBGA84
1-Gbit Double-Data-Rate-Two SDRAM
|
Qimonda AG
http://
|
| HY5DU561622DTP HY5DU561622DLTP HY5DU561622DLTP-K H |
DDR SDRAM - 256Mb
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM)
|
HYNIX[Hynix Semiconductor]
|
| HY5DU56422DTP HY5DU56822DTP HY5DU56822DTP-J HY5DU5 |
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) 32M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| MT46V16M8 |
DOUBLE DATA RATE DDR SDRAM
|
Micron Technology
|
| MT46V64M8TG-8 MT46V64M8TG-75 MT46V32M16TG-8L MT46V |
DOUBLE DATA RATE DDR SDRAM
|
MICRON[Micron Technology]
|
| MT46V64M16 MT46V128M8 MT46V256M4 |
DOUBLE DATA RATE (DDR) SDRAM
|
MICRON[Micron Technology]
|
| W9412G2IB W9412G2IB4 W9412G2IB-6I |
1M × 4 BANKS × 32 BITS GDDR SDRAM
Double Data Rate architecture; two data transfers per clock cycle
4M X 32 DDR DRAM, 0.7 ns, PBGA144
|
Winbond
WINBOND ELECTRONICS CORP
|
| HYB25D512400BC-5 HYB25D512160BC-5 HYB25D512400BT-6 |
512Mbit Double Data Rate (DDR) Components
|
Infineon
|
| MT46V64M16 |
(MT46Vxxx) DOUBLE DATA RATE DDR SDRAM
|
Micron Technology
|
| W942516CH W942516CH-75 W942516CH-5 W942516CH-6 |
DDR SDRAM (Double Data Rate)
4M X 4 BANKS X 16 BIT DDR SDRAM
From old datasheet system
|
Winbond Electronics
|
